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| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
| MEMORY | CSWJ | WORD QUANTITY8192 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
| MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 150 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CRHL | BIT QUANTITY65536 |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | ADAT | BODY WIDTH0 610 INCHES MAXIMUM |
| MEMORY | CBBL | FEATURES PROVIDEDMONOLITHIC AND PROGRAMMABLE AND ERASABLE |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| CM0-14-S6T | CM0-14-S6T | CM0-14-SGG | CM0 1-1 |
| CM0-16-S6T | CM0-16-S6G | CM0-16-W2T | CM0-14-S6T |
| CM0 1-5 | CM0-18-W2T | CM0-1004-707 | CM0-1004-704 |
| CM0-1004-704 | CM0-08-W3T | CM0 14 W2T | CM0-1004-707 |
 |
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