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| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.600 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.205 INCHES NOMINAL |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 800.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND HIGH SPEED AND 3-STATE OUTPUT AND STATIC OPERATION |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 11 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 20.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| 810-002-001 | 810-0011-001 | 810-002 | 810-002 |
| 810-0011-001 | 810-000-410-1 | 810-0012-001 | 810-002 |
| 810-0017-001 | 810-00 | 810-002 | 810-0017-001 |
| 810-0012-001 | 810-002 | 810-002-001 | 810-000361 |
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