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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-307-5783 Item Description: Microcircuit Memory | 5962 | 013075783 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
1818-3185 | 5 | 1 | C | A |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 36.0 MILLIMETERS NOMINAL |
ADAT | BODY WIDTH | 13.4 MILLIMETERS NOMINAL |
ADAU | BODY HEIGHT | 5.29 MILLIMETERS MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AGAV | END ITEM IDENTIFICATION | 4920-01-187-4068 TEST SYSTEM,AUT |
CBBL | FEATURES PROVIDED | HIGH SPEED AND LOW POWER AND 3-STATE OUTPUT AND W/ENABLE |
CQSJ | INCLOSURE MATERIAL | PLASTIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQZP | INPUT CIRCUIT PATTERN | 25 INPUT |
CZEQ | TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | RAM |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
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