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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-359-3335 Item Description: Transistor | 5961 | 013593335 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
2n2606 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO GATE VOLTAGE |
ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
ALAT | (NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE | P-CHANNEL JUNCTION TYPE |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-18 |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
AXGY | MOUNTING METHOD | TERMINAL |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM GATE CURRENT |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
2N2006 | 2N2011 | 2N2006 | 2N2008 |
2N2001 | 2N2000 | 2N2000 | 2N2004 |
2N2005 | 2N2010 | 2N2001 | 2N2001 |
2N2001 | 2N2010 | 2N2000 | 2N2000 |
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