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MRC | Criteria | Characteristic |
---|---|---|
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -25.0 MAXIMUM GATE TO SOURCE VOLTAGE |
ABMK | OVERALL WIDTH | 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
CBBL | FEATURES PROVIDED | HIGH FREQUENCY |
ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
AXGY | MOUNTING METHOD | TERMINAL |
ABKW | OVERALL HEIGHT | 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM |
ABBH | INCLOSURE MATERIAL | PLASTIC |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
ALAT | (NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE | N-CHANNEL JUNCTION TYPE |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
CTRD | POWER RATING PER CHARACTERISTIC | 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM GATE CURRENT |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
Q35-0003-002 | Q350 | Q3500-0113B | Q3500-0045C |
Q3500-0055B | Q350 | Q350 | Q35-0003-000 |
Q35-0001-001 | Q35-0003-100 | Q35 0004 001 | Q3500-0094 |
Q3500-0113B | Q35-0003-100 | Q350 | Q35-0004-001 |
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