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| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-71 |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | -0.20 NANOAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE AND 10.00 MILLIAMPERES MAXIMUM GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD |
| AGAV | III END ITEM IDENTIFICATION | 5811-01-305-8128 MODULE ASSEMBLY |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM GATE TO SOURCE VOLTAGE AND -8.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND -12.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE |
| VCR135B1-CW | VCR10N | VCR135B1-CW | VCR20N |
| VCR150B1 | VCR2N | VCR200B1 | VCR135B1-CW |
| VCR2N | VCR18 24 8 | VCR2N | VCR135B1-CCW |
| VCR2N | VCR2N | VCR122B1 | VCR2N |
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