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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-349-3396 Item Description: Microcircuit Memory | 5962 | 013493396 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Dm28c256-200 Bb125 | 2 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.610 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.232 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 6.2 VOLTS MAXIMUM INPUT |
CBBL | FEATURES PROVIDED | MONOLITHIC AND ERASABLE AND PROGRAMMABLE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CQZP | INPUT CIRCUIT PATTERN | 23 INPUT |
CZEQ | TIME RATING PER CHACTERISTIC | 200.00 NANOSECONDS MAXIMUM ACCESS |
CZER | MEMORY DEVICE TYPE | EEPROM |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
DM2-502 | DM20-1000MMFPORM2 | DM20-103J | DM20 |
DM20-102K | DM20-102J | DM20-1000MMFPORM2 | DM20 |
DM20-102G | DM20-102J | DM2-488-C | DM2-63M-C |
DM20-122J | DM20-102G | DM20-102G | DM20-102K |
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