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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-312-0598 Item Description: Microcircuit Memory | 5962 | 013120598 | 0 | N | D | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | D | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Zd2864 11 2 8 | 1 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ABKW | OVERALL HEIGHT0 357 INCHES MINIMUM AND 0 432 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 172 INCHES MINIMUM AND 0 217 INCHES MAXIMUM |
MEMORY | CQZP | INPUT CIRCUIT PATTERN24 INPUT |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-10 MIL-M-38510 |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC6 25 VOLTS MAXIMUM POWER SOURCE |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC250 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 250 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT |
MEMORY | ADAQ | BODY LENGTH1 490 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ERASABLE |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
ZD20 115 74 | ZD20CDT | ZD20S10A02 | ZD20S20A02 |
ZD20S20A06 | ZD20CFT | ZD20 000 70 | ZD20CDW |
ZD20CDT | ZD20S20A05 | ZD20CFW | ZD20CDW |
ZD20S20A03 | ZD20CD | ZD20 | ZD201-CW |
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