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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-363-6479 Item Description: Microcircuit Memory | 5962 | 013636479 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
760083 | 5 | 1 | C | 9 |
MRC | Criteria | Characteristic |
---|---|---|
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
AGAV | END ITEM IDENTIFICATION | MILSTAR |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MCKT,MEMORY DIGITAL,CMOS 16K (2048 X 8) BIT STATIC RAM,MONOLITHIC SILICON |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 4.5 VOLTS MINIMUM TOTAL SUPPLY AND 4.5 VOLTS MAXIMUM TOTAL SUPPLY |
FEAT | SPECIAL FEATURES | ESD;HCI. SELECTED FROM P/N 34371 HS1-65C162RRH-8 |
TTQY | TERMINAL TYPE AND QUANTITY | 24 BEAM LEAD |
CWSG | TERMINAL SURFACE TREATMENT | TIN |
CZER | MEMORY DEVICE TYPE | RAM |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
760-00086-5 | 760-0001 | 760-00005-00 | 760-001-009 |
760-0002 | 760 00027 00 | 760-00129-13 | 760-00100 |
760-00076-1 | 760-00-550-6415 | 760-001-009 | 760-0002 |
760 001 009 | 760-00133-12 | 760-001-009 | 760-00086-16 |
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