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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-355-0506 Item Description: Semiconductor Devic | 5961 | 013550506 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Gz64610j | 5 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL OR PLASTIC |
ABHP | OVERALL LENGTH | 0.750 INCHES NOMINAL |
ABKW | OVERALL HEIGHT | 0.620 INCHES NOMINAL |
ABMK | OVERALL WIDTH | 0.750 INCHES NOMINAL |
AKPV | MOUNTING FACILITY QUANTITY | 1 |
AXGY | MOUNTING METHOD | THREADED HOLE |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX |
CQJX | NOMINAL THREAD SIZE | 0.112 INCHES |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.8 MAXIMUM WORKING PEAK REVERSE VOLTAGE 5TH TRANSISTOR |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE 1ST SEMICONDUCTOR DEVICE DIODE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE 2ND SEMICONDUCTOR DEVICE DIODE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE 3RD SEMICONDUCTOR DEVICE DIODE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE 4TH SEMICONDUCTOR DEVICE DIODE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1000.00 MICROAMPERES FORWARD CURRENT, AVERAGE PEAK 1ST SEMICONDUCTOR DEVICE DIODE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1000.00 MICROAMPERES FORWARD CURRENT, AVERAGE PEAK 4TH SEMICONDUCTOR DEVICE DIODE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1000.00 MICROAMPERES FORWARD CURRENT, AVERAGE PEAK 5TH SEMICONDUCTOR DEVICE DIODE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS AMBIENT AIR |
THSD | THREAD SERIES DESIGNATOR | UNC |
TTQY | TERMINAL TYPE AND QUANTITY | 8 TAB, SOLDER LUG |
ASKA | COMPONENT NAME AND QUANTITY | 8 SEMICONDUCTOR DEVICE DIODE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE 5TH SEMICONDUCTOR DEVICE DIODE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1000.00 MICROAMPERES FORWARD CURRENT, AVERAGE PEAK 2ND SEMICONDUCTOR DEVICE DIODE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1000.00 MICROAMPERES FORWARD CURRENT, AVERAGE PEAK 3RD SEMICONDUCTOR DEVICE DIODE |
AFZC | FUNCTION FOR WHICH DESIGNED | TRANSIENT SUPPRESSOR |
CTQX | CURRENT RATING PER CHARACTERISTIC | 5.00 MICROAMPERES FORWARD CURRENT, AVERAGE PEAK 5TH TRANSISTOR |
GZ61015A | GZ60603A | GZ60923A | GZ61025D |
GZ61007B | GZ61007A | GZ60423-A | GZ61007B |
GZ61007B | GZ60923A | GZ61007A | GZ6 35-15V-150W |
GZ61025D | GZ60603A | GZ60923A | GZ61015A |
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