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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-349-3396 Item Description: Microcircuit Memory | 5962 | 013493396 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
725005-354 | 2 | 1 | C | A |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.610 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.232 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 6.2 VOLTS MAXIMUM INPUT |
CBBL | FEATURES PROVIDED | MONOLITHIC AND ERASABLE AND PROGRAMMABLE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CQZP | INPUT CIRCUIT PATTERN | 23 INPUT |
CZEQ | TIME RATING PER CHACTERISTIC | 200.00 NANOSECONDS MAXIMUM ACCESS |
CZER | MEMORY DEVICE TYPE | EEPROM |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
725-00 | 725-000-001 | 725-000320-000 | 725-000-001 |
725-000-001 | 725-0006 | 725-0007 | 725-000180-000 |
725-000 | 725-002700-000 | 725 004 | 725-000150-000 |
725-00261C-000 | 725-00084B-000 | 725-002750-000 | 725-002620-000 |
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