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| MRC | Criteria | Characteristic |
|---|---|---|
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CRHL | (NON-CORE DATA) BIT QUANTITY | 1024 |
| ADAT | BODY WIDTH | 0.310 INCHES MAXIMUM |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CSWJ | (NON-CORE DATA) WORD QUANTITY | 256 |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| CZER | MEMORY DEVICE TYPE | ROM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 715.0 MILLIWATTS |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | 3-STATE OUTPUT AND MONOLITHIC AND PROGRAMMABLE |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| HM1-0041-8 | HM1-013-2-114 | HM1-0034-2 | HM1-0 |
| HM1-0104-8 | HM1-013-2-114 | HM1 0104 5 | HM1-0104-C16-1 |
| HM1-0034-8 | HM1-0104-8 | HM1-013-096 | HM1-013-2-114 |
| HM1-0104-1 | HM1 0110 8 | HM1-0110-8 | HM1-0041-8 |
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