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    //   NSN   //   Raytheon Company   //   Part 2211416 0001

Part 2211416-0001 With Different Manufacturers

2211416-0001
Ametek Programmable Power Inc
Transistor
NSN: 5961011331223
CAGE Code: 25965
RFQ
2211416-0001
King Nutronics Corporation
Transistor
NSN: 5961011331223
CAGE Code: 13859
RFQ
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2211416-0001 Transistor by Raytheon Company with NSN 5961-01-133-1223 - Buy Now!

Mfg Part Number: 2211416-0001
Alternate P/N:22114160001
Manufacturer: Raytheon Company
NSN :5961-01-133-1223
Item Name : transistor
FSC :5961 Semiconductor Devices and Associated Hardware
Thank you for your interest in 2211416-0001 under FSC5961 Semiconductor Devices and Associated Hardware NSN part on ASAP Global Supplies. Transistor is listed under the part number 2211416-0001, and it is manufactured by Raytheon Company. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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NSN Information for Part Number 2211416-0001 with NSN 5961-01-133-1223, 5961011331223

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5961-01-133-1223

Item Description:

Transistor

59610113312230NB
CIICHCCESDPMICCriticalityENAC
U A
Part NumberISCRNVCRNCCHCCMSDSSADC
2211416-000131CA

Characteristics Data of NSN 5961-01-133-1223, 5961011331223

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALPLASTIC
ABHPOVERALL LENGTH0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
ABJTTERMINAL LENGTH0.500 INCHES MINIMUM
ABKWOVERALL HEIGHT0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
ABMKOVERALL WIDTH0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
AGAVEND ITEM IDENTIFICATIONTESTSTANDT76E 54932
ALASINTERNAL CONFIGURATIONJUNCTION CONTACT
ALAZJOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-92
ASCQINTERNAL JUNCTION CONFIGURATIONPNP
AXGYMOUNTING METHODTERMINAL
CTMZIII SEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
CTQXCURRENT RATING PER CHARACTERISTIC600.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM
CTRDPOWER RATING PER CHARACTERISTIC600.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
TTQYTERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD

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221-001-261 221-001-260 221-00 221-001-261
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221-001-279 221 001 155 221-001-374 221-0000100033
221-001-155 221 001 155 221-0001000025 221-001-376

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