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| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -0.0/+70.0 DEG CELSIUS |
| ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM |
| ADAQ | BODY LENGTH | 0.870 INCHES MAXIMUM |
| CZEQ | TIME RATING PER CHACTERISTIC | 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 325.0 MILLIWATTS |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS MAXIMUM POWER SOURCE |
| CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| AFJQ | STORAGE TEMP RANGE | 65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | PROGRAMMABLE AND W/OPEN COLLECTOR AND HERMETICALLY SEALED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| ADAU | BODY HEIGHT | 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CZER | MEMORY DEVICE TYPE | ROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| 63S-0274M-004 | 63S080N | 63S-0427M-001 | 63S081N |
| 63S0427M0020 | 63S-0547M-002 | 63S081J | 63S081N |
| 63S-0600M-001 | 63S081N | 63S0108 | 63S081N |
| 63S081N | 63S-25 | 63S0352M0020 | 63S0427M0020 |
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