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MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.930 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.300 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.175 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 532.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | +0.0/+75.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND W/ENABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
FEAT | SPECIAL FEATURES | ELECTROSTATIC SENSITIVE |
TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
N8201N | N8201A-526-110-H01-HS1 | N8200N | N8202N |
N820 | N82-119-09 | N820 | N820 |
N8202 | N8200 20202 | N8202Y | N8201N |
N8202N | N8202F | N8200-1 | N820-03M |
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