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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-00-504-0015 Item Description: Microcircuit Memory | 5962 | 005040015 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | D | A | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| N8223b | 2 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.095 INCHES MINIMUM AND 0.140 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 400.0 MILLIWATTS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+175.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BIPOLAR AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/BUFFERED OUTPUT AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND HIGH SPEED |
| CQSJ | INCLOSURE MATERIAL | PLASTIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | -0-001-AE JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 33048-41-010085 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DR |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| N8202 | N8202N | N8200N | N8202Y |
| N820 | N820 | N8202N | N8202Y |
| N8202F | N8201A-526-110-H01-HS1 | N820-03M | N8200-1 |
| N8201N | N8201N | N82-119-09 | N8200 20202 |
 |
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