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    //   NSN   //   Philips Semiconductors Ltd   //   Part BLW90

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BLW90 Transistor by Philips Semiconductors Ltd with NSN 5961-01-563-8168 - Buy Now!

Mfg Part Number: BLW90
Manufacturer: Philips Semiconductors Ltd
NSN :5961-01-563-8168
Item Name : transistor
FSC :5961 Semiconductor Devices and Associated Hardware
Thank you for your interest in BLW90 under FSC5961 Semiconductor Devices and Associated Hardware NSN part on ASAP Global Supplies. Transistor is listed under the part number BLW90, and it is manufactured by Philips Semiconductors Ltd. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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ASAP Global Supplies is a website owned and operated by ASAP Semiconductor, and we are a leading independent supplier of BLW90 Transistor NSN part that serve a variety of applications. We invite you to explore our NSN part catalogues at your leisure to find a plethora of top requested items, such as 5961015638168. We uphold a strict no China sourcing policy, choosing instead to stock our inventory from top global manufacturers such as Philips Semiconductors Ltd. Due to our commitment to quality standards and guidelines, we operate as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today on the purchasing process and see how ASAP Global Supplies can fulfill all of your operational needs with ease.

Characteristics Data of NSN 5961-01-563-8168, 5961015638168

MRCCriteriaCharacteristic
ABMKOVERALL WIDTH25.8 MILLIMETERS MINIMUM AND 27.6 MILLIMETERS MAXIMUM
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CTMZSEMICONDUCTOR MATERIALSILICON
ABBHINCLOSURE MATERIALCERAMIC
ALASINTERNAL CONFIGURATIONJUNCTION CONTACT
ABHPOVERALL LENGTH15.8 MILLIMETERS MINIMUM AND 16.8 MILLIMETERS MAXIMUM
ASCQINTERNAL JUNCTION CONFIGURATIONNPN
CTQXCURRENT RATING PER CHARACTERISTIC2.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
CTRDPOWER RATING PER CHARACTERISTIC18.60 WATTS MAXIMUM TOTAL POWER DISSIPATION

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