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MRC | Criteria | Characteristic |
---|---|---|
CSWJ | (NON-CORE DATA) WORD QUANTITY | 1024 |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
ADAQ | BODY LENGTH | 0.750 INCHES MINIMUM AND 0.790 INCHES MAXIMUM |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
AFGA | OPERATING TEMP RANGE | -10.0 TO 80.0 DEG CELSIUS |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
ADAT | BODY WIDTH | 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM |
CBBL | FEATURES PROVIDED | MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND EXPANDABLE AND W/DECODED OUTPUT AND W/ENABLE |
CZER | MEMORY DEVICE TYPE | RAM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
CZZZ | MEMORY CAPACITY | UNKNOWN |
CRHL | (NON-CORE DATA) BIT QUANTITY | 1024 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
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