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| MRC | Criteria | Characteristic |
|---|---|---|
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 0 10 NANOAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE JUNCTION-GATE AND 7 00 MILLIAMPERES MINIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT AND 20 00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCILJEDECCASE OUTLINE DESIGNATION | TO-92 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25 0 MINIMUM BREAKDOWN VOLTAGE GATE-TO-SOURCE WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 2 5 MINIMUM PEAK-POINT VOLTAGE AND 4 5 MAXIMUM PEAK-POINT VOLTAGE |
| ABHP | OVERALL LENGTH | 0 190 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 0 500 INCHES MINIMUM |
| ABKW | OVERALL HEIGHT | 0 670 INCHES MINIMUM |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| ABMK | OVERALL WIDTH | 0 145 INCHES NOMINAL |
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