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| MRC | Criteria | Characteristic |
|---|---|---|
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 PIN |
| ABBH | INCLOSURE MATERIAL | METAL |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-18 |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | NPN |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| 2N2010 | 2N2004 | 2N2000 | 2N2005 |
| 2N2001 | 2N2006 | 2N2006 | 2N2001 |
| 2N2008 | 2N2010 | 2N2001 | 2N2000 |
| 2N2000 | 2N2006 | 2N2011 | 2N2001 |
 |
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