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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-028-2081 Item Description: Microcircuit Memory | 5962 | 010282081 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | U | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Cd4520bd 3 | 3 | 1 | C | 9 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 745 INCHES MINIMUM AND 0 785 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 240 INCHES MINIMUM AND 0 260 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 095 INCHES MINIMUM AND 0 140 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING500 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATIONRECEIVER FSCM 50464 |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND HIGH VOLTAGE AND POSITIVE OUTPUTS AND EDGE TRIGGERED AND WCLEAR AND RESETTABLE AND WENABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERNDUAL 3 INPUT |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATOR-0-001-AE JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 20 5 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TEST | TEST DATA DOCUMENT81349-MIL-STD-883 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
 |
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