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P2114-2 Microcircuit Memory by L3 Communications Corp with NSN 5962-01-116-5782 - Buy Now!

Mfg Part Number: P2114-2

Alternate P/N:P21142
Manufacturer: L3 Communications Corp
Thank you for your interest in P2114-2 under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number P2114-2, and it is manufactured by L3 Communications Corp. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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NSN Information for Part Number P2114-2 with NSN 5962-01-116-5782, 5962011165782

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-116-5782

Item Description:

Microcircuit Memory

59620111657820NB
CIICHCCESDPMICCriticalityENAC
U A0
Part NumberISCRNVCRNCCHCCMSDSSADC
P2114-2395

Characteristics Data of NSN 5962-01-116-5782, 5962011165782

MRCCriteriaCharacteristic
MEMORYADAQBODY LENGTH0 895 INCHES MINIMUM AND 0 905 INCHES MAXIMUM
MEMORYADATBODY WIDTH0 245 INCHES MINIMUM AND 0 255 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 130 INCHES MINIMUM AND 0 140 INCHES MAXIMUM
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING1 0 WATTS
MEMORYAFGAOPERATING TEMP RANGE-0 070 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORYAGAVEND ITEM IDENTIFICATION6930-01-102-2345 36378
MEMORYCBBLFEATURES PROVIDEDPROGRAMMABLE AND PROGRAMMED AND 3-STATE OUTPUT
MEMORYCQSJINCLOSURE MATERIALPLASTIC
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORYCQWXOUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN16 INPUT
MEMORYCRHLBIT QUANTITY4096
MEMORYCSWJWORD QUANTITY1024
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC18 0 VOLTS MAXIMUM POWER SOURCE
MEMORYCZEQTIME RATING PER CHACTERISTIC200 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 200 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORYCZERMEMORY DEVICE TYPERAM
MEMORYTTQYTERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT

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