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MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 230 INCHES MINIMUM AND 1 260 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 530 INCHES MINIMUM AND 0 550 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 160 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-0 070 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDED3-STATE OUTPUT AND WIRE-OR OUTPUTS AND HIGH PERFORMANCE AND STATIC OPERATION AND ASYNCHRONOUS |
MEMORY | CQSJ | INCLOSURE MATERIALPLASTIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
MEMORY | CRHL | BIT QUANTITY32768 |
MEMORY | CSWJ | WORD QUANTITY4096 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC450 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 450 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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