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| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 525.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+125.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | 4920-01-084-7157 TEST STATION,AN |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| D27-02 | D27-6 | D27-01 | D27-99-18 |
| D27-54321 | D27-99-17 | D27-99-16 | D27 99 19 |
| D27-137-01 | D27-122 | D27-3 | D27-3 |
| D27-122 | D27-3 | D27-54321 | D27-85-001 |
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