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MRC | Criteria | Characteristic |
---|---|---|
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CZEQ | TIME RATING PER CHACTERISTIC | 220.00 NANOSECONDS NOMINAL ACCESS |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CZER | MEMORY DEVICE TYPE | RAM |
CRHL | (NON-CORE DATA) BIT QUANTITY | 256 |
AFGA | OPERATING TEMP RANGE | -40.0 TO 85.0 DEG CELSIUS |
CSWJ | (NON-CORE DATA) WORD QUANTITY | 4 |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | 256 X 4 CMOS RAM |
CBBL | FEATURES PROVIDED | HIGH PERFORMANCE AND 3-STATE OUTPUT AND LOW POWER AND SYNCHRONOUS |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 2.0 VOLTS NOMINAL INPUT |
TTQY | TERMINAL TYPE AND QUANTITY | 22 PIN |
CQSJ | INCLOSURE MATERIAL | PLASTIC |
HM3 6514-5 | HM3-3-1-2 | HM3-6514-9 | HM3-3 1-2 |
HM3-3-1-2-100-0-100MADC | HM3-2C5 | HM3-3-1-2 | HM3-12P |
HM3-6514-9 | HM3-3 1-2 | HM3-3 1-2 | HM3-31-2 |
HM3-61162-9 | HM3-6551-9 | HM3-6514-9 | HM3 1-2 |
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