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| MRC | Criteria | Characteristic |
|---|---|---|
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CSSL | DESIGN FUNCTION AND QUANTITY | 4 GATE, NAND BUFFER |
| CZEQ | TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CQSJ | INCLOSURE MATERIAL | PLASTIC |
| ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM |
| TTQY | TERMINAL TYPE AND QUANTITY | 14 PRINTED CIRCUIT |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQZP | INPUT CIRCUIT PATTERN | QUAD 2 INPUT |
| CBBL | FEATURES PROVIDED | W/BUFFERED OUTPUT AND MONOLITHIC AND POSITIVE OUTPUTS |
| ADAU | BODY HEIGHT | 0.125 INCHES MINIMUM AND 0.135 INCHES MAXIMUM |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| ADAQ | BODY LENGTH | 0.770 INCHES MAXIMUM |
| ABKW | III OVERALL HEIGHT | 0.275 INCHES NOMINAL |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| AFGA | OPERATING TEMP RANGE | -40.0 TO 85.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
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