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MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 900 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 260 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 180 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | AGAV | END ITEM IDENTIFICATIONANAPN-221 90073 |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND HIGH SPEED AND LOW POWER AND 3-STATE OUTPUT |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN12 INPUT |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 3 VOLTS MINIMUM POWER SOURCE AND 8 3 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |
656-0005-02 | 656-0005-02 | 656-00-0007 | 656-0009-901 |
656-00-100 | 656-00-0003 | 656-0009-901 | 656-0001 |
656-00-100 | 656-00-0004 | 656-0005-02 | 656-00017A0-102K |
656-00-0003 | 656-0000 | 656-00001 | 656-00-0003 |
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