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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-595-5644 Item Description: Transistor | 5961 | 015955644 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Irfr3910pbf | 5 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
AXGY | MOUNTING METHOD | TERMINAL |
TTQY | TERMINAL TYPE AND QUANTITY | 3 INSULATED WIRE LEAD |
ABBH | INCLOSURE MATERIAL | PLASTIC |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1.60 AMPERES MAXIMUM DRAIN CURRENT |
CXCY | III PART NAME ASSIGNED BY CONTROLLING AGENCY | 100V SINGLE N CHANNEL HEXFET POWER MOSFET IN A D-PAK PACKAGE |
ABKW | OVERALL HEIGHT | 2.38 MILLIMETERS MAXIMUM |
CTRD | POWER RATING PER CHARACTERISTIC | 79.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
ABHP | OVERALL LENGTH | 10.42 MILLIMETERS MAXIMUM |
ABMK | OVERALL WIDTH | 6.60 MILLIMETERS MAXIMUM |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
IRF 640 | IRF 633 | IRF1010E | IRF-1 33UH 10 |
IRF-821 | IRF1010NSPBF | IRF0340 | IRF120 |
IRF 630 | IRF 3 33 10PCT | IRF 1405 | IRF1010NSPBF |
IRF 640 | IRF-602BD2 | IRF1010 | IRF0340 |
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