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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-226-9674 Item Description: Transistor | 5961 | 012269674 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | A | |||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Irf9130 | 3 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 1.573 INCHES MAXIMUM |
ABKW | OVERALL HEIGHT | 0.450 INCHES MAXIMUM |
ABMK | OVERALL WIDTH | 1.050 INCHES MAXIMUM |
AKPV | MOUNTING FACILITY QUANTITY | 2 |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
AXGY | MOUNTING METHOD | UNTHREADED HOLE |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 4.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
TTQY | TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
IRF-602BD2 | IRF 252 | IRF1010NSPBF | IRF120 |
IRF 640 | IRF0340 | IRF054SM | IRF0340 |
IRF 640 | IRF 633 | IRF-821 | IRF 1405 |
IRF 640 | IRF1010 | IRF1010E | IRF 3 33 10PCT |
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