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MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.485 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.600 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.175 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 790.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND W/ENABLE AND W/BUFFERED OUTPUT |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
216-00038 | 216-00012 | 216-0002-003 | 216-00012 |
216-000-001L000 | 216-00039 | 216-000-011L999 | 216-00038 |
216-00 | 216-000-001L999 | 216-0 | 216-00 |
216-00038 | 216-00039 | 216-000-011L000 | 216-00039 |
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