Part SM-A-959137 With Different Manufacturers

SM-A-959137

Aai Inc

Microcircuit Memory

NSN: 5962011887173

CAGE Code: 97384

RFQ

SM-A-959137

Advanced Micro Devices Inc

Microcircuit Memory

NSN: 5962011887173

CAGE Code: 34335

RFQ

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SM-A-959137 Microcircuit Memory by Intel Corporation with NSN 5962-01-188-7173 - Buy Now!

Mfg Part Number: SM-A-959137

Alternate P/N:SMA959137

Manufacturer: Intel Corporation

NSN :5962-01-188-7173

Item Name : microcircuit memory

FSC :5962 Microcircuits Electronic

Thank you for your interest in SM-A-959137 under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number SM-A-959137, and it is manufactured by Intel Corporation. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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NSN Information for Part Number SM-A-959137 with NSN 5962-01-188-7173, 5962011887173

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-188-7173 Item Description: Microcircuit Memory	5962	011887173	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
Sm-A-959137	3	2	3

Characteristics Data of NSN 5962-01-188-7173, 5962011887173

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH50 2 MILLIMETERS MINIMUM AND 51 3 MILLIMETERS MAXIMUM
MEMORY	ADAT	BODY WIDTH14 8 MILLIMETERS MINIMUM AND 15 6 MILLIMETERS MAXIMUM
MEMORY	ADAU	BODY HEIGHT2 0 MILLIMETERS MINIMUM AND 2 6 MILLIMETERS MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 5 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	AGAV	END ITEM IDENTIFICATION5820-01-145-4902 MODEMCABLE DRI
MEMORY	CBBL	FEATURES PROVIDEDBURN IN MIL-STD-883 CLASS B AND HERMETICALLY SEALED AND MONOLITHIC AND STATIC OPERATION AND ELECTROSTATIC SENSITIVE
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMMETAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN37 INPUT
MEMORY	CRHL	BIT QUANTITY2048
MEMORY	CSWJ	WORD QUANTITY256
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 0 VOLTS NOMINAL POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC400 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 400 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPERAM
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT

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