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    //   NSN   //   Intel Corporation   //   Part P2114A 4

Part P2114A 4 With Different Manufacturers

P2114A-4
L3 Communications Corp
Microcircuit Memory
NSN: 5962011165782
CAGE Code: 1PQF4
RFQ
P2114A-4
Raytheon Technical Services Company
Microcircuit Memory
NSN: 5962011165782
CAGE Code: 36378
RFQ
P2114A-4
Int
RFQ
P2114A 4
Intel
RFQ
P2114A-4
International Rectifier
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P2114A-4
Ir
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P2114A 4 Microcircuit Memory by Intel Corporation with NSN 5962-01-116-5782 - Buy Now!

Mfg Part Number: P2114A 4
Alternate P/N:P2114A4
Manufacturer: Intel Corporation
NSN :5962-01-116-5782
Item Name : microcircuit memory
FSC :5962 Microcircuits Electronic
Thank you for your interest in P2114A 4 under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number P2114A 4, and it is manufactured by Intel Corporation. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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NSN Information for Part Number P2114A 4 with NSN 5962-01-116-5782, 5962011165782

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-116-5782

Item Description:

Microcircuit Memory

59620111657820NB
CIICHCCESDPMICCriticalityENAC
U A0
Part NumberISCRNVCRNCCHCCMSDSSADC
P2114A 4393

Characteristics Data of NSN 5962-01-116-5782, 5962011165782

MRCCriteriaCharacteristic
MEMORYADAQBODY LENGTH0 895 INCHES MINIMUM AND 0 905 INCHES MAXIMUM
MEMORYADATBODY WIDTH0 245 INCHES MINIMUM AND 0 255 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 130 INCHES MINIMUM AND 0 140 INCHES MAXIMUM
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING1 0 WATTS
MEMORYAFGAOPERATING TEMP RANGE-0 070 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORYAGAVEND ITEM IDENTIFICATION6930-01-102-2345 36378
MEMORYCBBLFEATURES PROVIDEDPROGRAMMABLE AND PROGRAMMED AND 3-STATE OUTPUT
MEMORYCQSJINCLOSURE MATERIALPLASTIC
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORYCQWXOUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN16 INPUT
MEMORYCRHLBIT QUANTITY4096
MEMORYCSWJWORD QUANTITY1024
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC18 0 VOLTS MAXIMUM POWER SOURCE
MEMORYCZEQTIME RATING PER CHACTERISTIC200 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 200 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORYCZERMEMORY DEVICE TYPERAM
MEMORYTTQYTERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT

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