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    //   NSN   //   Intel Corporation   //   Part 2104(S1234

Part 2104(S1234 With Different Manufacturers

2104(S1234
Fairchild Semiconductor Ltd
Microcircuit Memory
NSN: 5962010949069
CAGE Code: 07263
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2104(S1234
Unisys Ltd
Microcircuit Memory
NSN: 5962010949069
CAGE Code: 4S536
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2104(S1234 Microcircuit Memory by Intel Corporation with NSN 5962-01-094-9069 - Buy Now!

Mfg Part Number: 2104(S1234
Alternate P/N:2104S1234
Manufacturer: Intel Corporation
NSN :5962-01-094-9069
Item Name : microcircuit memory
FSC :5962 Microcircuits Electronic
Thank you for your interest in 2104(S1234 under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number 2104(S1234, and it is manufactured by Intel Corporation. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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ASAP Global Supplies is a website owned and operated by ASAP Semiconductor, and we are a leading independent supplier of 2104(S1234 Microcircuit Memory NSN part that serve a variety of applications. We invite you to explore our NSN part catalogues at your leisure to find a plethora of top requested items, such as 5962010949069. We uphold a strict no China sourcing policy, choosing instead to stock our inventory from top global manufacturers such as Intel Corporation. Due to our commitment to quality standards and guidelines, we operate as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today on the purchasing process and see how ASAP Global Supplies can fulfill all of your operational needs with ease.

Characteristics Data of NSN 5962-01-094-9069, 5962010949069

MRCCriteriaCharacteristic
TTQYTERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT
CQZPINPUT CIRCUIT PATTERN10 INPUT
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND DYNAMIC AND W/STROBE AND W/ENABLE
CQSJINCLOSURE MATERIALCERAMIC
CZEQTIME RATING PER CHACTERISTIC50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
ADATBODY WIDTH0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CZERMEMORY DEVICE TYPEROM
ADAUBODY HEIGHT0.185 INCHES MAXIMUM
CZZZMEMORY CAPACITYUNKNOWN
AFGAOPERATING TEMP RANGE0.0 TO 70.0 DEG CELSIUS
AEHXMAXIMUM POWER DISSIPATION RATING1.25 WATTS
CRHL(NON-CORE DATA) BIT QUANTITY4096
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0.5 VOLTS MINIMUM POWER SOURCE AND 25.0 VOLTS MAXIMUM POWER SOURCE
CQWXOUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
ADAQBODY LENGTH0.780 INCHES MINIMUM AND 0.820 INCHES MAXIMUM
TESTTEST DATA DOCUMENT21101-49A0295 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)
AFJQSTORAGE TEMP RANGE-55.0 TO 150.0 DEG CELSIUS

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