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MRC | Criteria | Characteristic |
---|---|---|
CQSZ | INCLOSURE CONFIGURATION | PIN GRID ARRAY |
CBBL | FEATURES PROVIDED | BURN IN, MIL-STD-883, CLASS B AND HIGH SPEED AND LOW POWER AND STATIC OPERATION AND 3-STATE OUTPUT |
CZER | MEMORY DEVICE TYPE | RAM |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
FEAT | SPECIAL FEATURES | ACCESS SPEED 55.0 NANOSECONDS |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
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