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    //   NSN   //   Integrated Device Technology Inc   //   Part 71B229S16LB

Part 71B229S16LB With Different Manufacturers

71B229S16LB
Raytheon Company
Microcircuit Memory
NSN: 5962014151213
CAGE Code: 96214
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71B229S16LB Microcircuit Memory by Integrated Device Technology Inc with NSN 5962-01-415-1213 - Buy Now!

Mfg Part Number: 71B229S16LB
Manufacturer: Integrated Device Technology Inc
NSN :5962-01-415-1213
Item Name : microcircuit memory
FSC :5962 Microcircuits Electronic
Thank you for your interest in 71B229S16LB under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number 71B229S16LB, and it is manufactured by Integrated Device Technology Inc. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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ASAP Global Supplies is a website owned and operated by ASAP Semiconductor, and we are a leading independent supplier of 71B229S16LB Microcircuit Memory NSN part that serve a variety of applications. We invite you to explore our NSN part catalogues at your leisure to find a plethora of top requested items, such as 5962014151213. We uphold a strict no China sourcing policy, choosing instead to stock our inventory from top global manufacturers such as Integrated Device Technology Inc. Due to our commitment to quality standards and guidelines, we operate as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today on the purchasing process and see how ASAP Global Supplies can fulfill all of your operational needs with ease.

NSN Information for Part Number 71B229S16LB with NSN 5962-01-415-1213, 5962014151213

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-415-1213

Item Description:

Microcircuit Memory

59620141512130NB
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
71b229s16lb523

Characteristics Data of NSN 5962-01-415-1213, 5962014151213

MRCCriteriaCharacteristic
ADAQBODY LENGTH0.817 INCHES MINIMUM AND 0.833 INCHES MAXIMUM
TESTTEST DATA DOCUMENT96906-MIL-STD883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
CQWXOUTPUT LOGIC FORMBIPOLAR METAL-OXIDE SEMICONDUCTOR
AGAVIII END ITEM IDENTIFICATIONF-16 MODULAR MISSION COMPUTER CORE CLUSTER
CZERMEMORY DEVICE TYPERAM
CXCYPART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUIT, DIGITAL, MEMORY, CACHE RAM, 16K X 9 X 2
CRHL(NON-CORE DATA) BIT QUANTITY147456
TTQYTERMINAL TYPE AND QUANTITY32 PRINTED CIRCUIT
CBBLFEATURES PROVIDEDELECTROSTATIC SENSITIVE
ADAUBODY HEIGHT0.080 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
CWSGTERMINAL SURFACE TREATMENTSOLDER
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS
CSWJ(NON-CORE DATA) WORD QUANTITY16384
ADATBODY WIDTH0.395 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
FEATSPECIAL FEATURESBICAMERAL (2 BANK) CACHE RAM SPECIFICALLY DESIGNED TO SUPPORT SPLIT INSTRUCTION & DATA CACHES OF R3000 TYPE MICROPROCESSORS
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC4.5 VOLTS MINIMUM TOTAL SUPPLY AND 5.5 VOLTS MAXIMUM TOTAL SUPPLY
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS
CRTLCRITICALITY CODE JUSTIFICATIONCBBL
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
AEHXMAXIMUM POWER DISSIPATION RATING1.0 WATTS

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