Part CY6116-55LMB With Different Manufacturers

CY6116-55LMB

Cypress Semiconductor Inc

Microcircuit Memory

NSN: 5962013020502

CAGE Code: 65786

RFQ

CY6116-55LMB

Dla Land And Maritime

Microcircuit Memory

NSN: 5962013020502

CAGE Code: 67268

RFQ

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CY6116-55LMB Microcircuit Memory by Integrated Device Technology Inc with NSN 5962-01-302-0502 - Buy Now!

Mfg Part Number: CY6116-55LMB

Alternate P/N:CY611655LMB

Manufacturer: Integrated Device Technology Inc

NSN :5962-01-302-0502

Item Name : microcircuit memory

FSC :5962 Microcircuits Electronic

Thank you for your interest in CY6116-55LMB under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number CY6116-55LMB, and it is manufactured by Integrated Device Technology Inc. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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NSN Information for Part Number CY6116-55LMB with NSN 5962-01-302-0502, 5962013020502

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-302-0502 Item Description: Microcircuit Memory	5962	013020502	0	N	D
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		D	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
Cy6116-55lmb	5	1	5

Characteristics Data of NSN 5962-01-302-0502, 5962013020502

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 060 INCHES MINIMUM AND 0 100 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 0 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-55 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND WENABLE
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONLEADLESS FLAT PACK
MEMORY	CQWX	OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN22 INPUT
MEMORY	CRHL	BIT QUANTITY16384
MEMORY	CSWJ	WORD QUANTITY2048
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORC-4 MIL-M-38510
MEMORY	CTQX	CURRENT RATING PER CHARACTERISTIC120 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPERAM
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY28 LEADLESS

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