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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-024-1009 Item Description: Transistor | 5961 | 010241009 | 0 | N | A | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | U | |||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Mu579 | 2 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 0.01 MILLIAMPERES MAXIMUM GATE CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 222.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
MU50D0400 | MU501MSQ54 | MU50D0200 | MU50D0800 |
MU50-1 RATIO 80 TO 1 5""CD 730015 | MU50-1 RATIO 80 TO 1 5 | MU50D0300 | MU50D0700 |
MU50D1200 | MU501 | MU50D1300 | MU50D0900 |
MU50D0000 | MU50D1100 | MU501 | MU50D0600 |
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