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MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.185 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-78 |
ASKA | COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR AND -30.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR AND -30.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, DC ALL TRANSISTOR |
CTQX | CURRENT RATING PER CHARACTERISTIC | -25.00 MILLIAMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR |
CTRD | POWER RATING PER CHARACTERISTIC | 325.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
TTQY | TERMINAL TYPE AND QUANTITY | 8 UNINSULATED WIRE LEAD |
MEM-1G-EB | MEM-1G-D-SU | MEM-0001-PC2 | MEM-00035 |
MEM-110-ALMOND | MEM-111-ALMOND | MEM 00022 | MEM-1X4F |
MEM-00036 | MEM-1G-D | MEM-130-DK-ALMOND | MEM-130-DF-ALMOND |
MEM-1X4D | MEM-00121 | MEM-00054 | MEM-117-Q-ALMOND |
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