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MRC | Criteria | Characteristic |
---|---|---|
ABKW | OVERALL HEIGHT | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
CCDG | OVERALL WIDTH ACROSS FLATS | 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTRD | POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
FET11C | FET-3318 | FET-3290 | FET-102 |
FET-3269 | FET-3247 | FET-3312 | FET-3316 |
FET-3315 | FET-3246 | FET-3313 | FET-3248 |
FET-3317 | FET-3270 | FET-3295 | FET-3300 |
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