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| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| SR-1 | MANUFACTURERS CODE | 81982 |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| SR-1 | MFR SOURCE CONTROLLING REFERENCE | 42-06580-11 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| ABHP | OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| SR-1 | SPEC/STD CONTROLLING DATA | |
| AXGY | MOUNTING METHOD | TERMINAL |
| FEAT | SPECIAL FEATURES | INTERNAL JUNCTION CONFIGURATION ARRANGEMENT PNPN |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-5 |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.60 AMPERES MAXIMUM ON-STATE CURRENT, DC |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| 2N2001 | 2N2010 | 2N2001 | 2N2000 |
| 2N2005 | 2N2000 | 2N2001 | 2N2005 |
| 2N2010 | 2N2008 | 2N2010 | 2N2000 |
| 2N2000 | 2N2006 | 2N2006 | 2N2000 |
 |
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