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OW6264CC3-15 Microcircuit Memory by Ge Aviation Systems Llc with NSN 5962-01-233-3489 - Buy Now!

Mfg Part Number: OW6264CC3-15

Alternate P/N:OW6264CC315
Thank you for your interest in OW6264CC3-15 under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number OW6264CC3-15, and it is manufactured by Ge Aviation Systems Llc. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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ASAP Global Supplies is a website owned and operated by ASAP Semiconductor, and we are a leading independent supplier of OW6264CC3-15 Microcircuit Memory NSN part that serve a variety of applications. We invite you to explore our NSN part catalogues at your leisure to find a plethora of top requested items, such as 5962012333489. We uphold a strict no China sourcing policy, choosing instead to stock our inventory from top global manufacturers such as Ge Aviation Systems Llc. Due to our commitment to quality standards and guidelines, we operate as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today on the purchasing process and see how ASAP Global Supplies can fulfill all of your operational needs with ease.

NSN Information for Part Number OW6264CC3-15 with NSN 5962-01-233-3489, 5962012333489

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-233-3489

Item Description:

Microcircuit Memory

59620123334890ND
CIICHCCESDPMICCriticalityENAC
7DA0
Part NumberISCRNVCRNCCHCCMSDSSADC
Ow6264cc3-15215

Characteristics Data of NSN 5962-01-233-3489, 5962012333489

MRCCriteriaCharacteristic
MEMORYADAQBODY LENGTH0 560 INCHES MAXIMUM
MEMORYADATBODY WIDTH0 460 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 045 INCHES NOMINAL
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING495 0 MILLIWATTS
MEMORYAFGAOPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORYCBBLFEATURES PROVIDEDELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND LOW POWER
MEMORYCQSJINCLOSURE MATERIALCERAMIC
MEMORYCQSZINCLOSURE CONFIGURATIONLEADLESS FLAT PACK
MEMORYCQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN25 INPUT
MEMORYCRHLBIT QUANTITY65536
MEMORYCSWJWORD QUANTITY8192
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE
MEMORYCZEQTIME RATING PER CHACTERISTIC150 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 150 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORYCZERMEMORY DEVICE TYPERAM
MEMORYTESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORYTTQYTERMINAL TYPE AND QUANTITY32 LEADLESS

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