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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-293-6609 Item Description: Microcircuit Memory | 5962 | 012936609 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Mb8416a-12p | 5 | 1 | C | A |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.300 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.520 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.205 INCHES MAXIMUM |
AFGA | OPERATING TEMP RANGE | -40.0 TO 85.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | LOW POWER AND HIGH SPEED AND W/ENABLE |
CQSJ | INCLOSURE MATERIAL | PLASTIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 21 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | RAM |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
MB804PC26 | MB8018 | MB800-0-100-200KL1 | MB800-0-100-200KL1 |
MB8030A | MB8010 | MB8017 | MB800439 |
MB8018 | MB8010 | MB8010 | MB800261 |
MB805-10 | MB800-0-100-200KL1 | MB800-0-100-200KL1 | MB8010 |
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