Part OW6264CC3-15 With Different Manufacturers

OW6264CC3-15

American Business Alliance Inc

Microcircuit Memory

NSN: 5962012333489

CAGE Code: 08040

RFQ

OW6264CC3-15

Ge Aviation Systems Llc

Microcircuit Memory

NSN: 5962012333489

CAGE Code: 35351

RFQ

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OW6264CC3-15 Microcircuit Memory by Fujitsu Microelectronics Inc with NSN 5962-01-233-3489 - Buy Now!

Mfg Part Number: OW6264CC3-15

Alternate P/N:OW6264CC315

Manufacturer: Fujitsu Microelectronics Inc

NSN :5962-01-233-3489

Item Name : microcircuit memory

FSC :5962 Microcircuits Electronic

Thank you for your interest in OW6264CC3-15 under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number OW6264CC3-15, and it is manufactured by Fujitsu Microelectronics Inc. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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NSN Information for Part Number OW6264CC3-15 with NSN 5962-01-233-3489, 5962012333489

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-233-3489 Item Description: Microcircuit Memory	5962	012333489	0	N	D
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		D	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
Ow6264cc3-15	2	1	5

Characteristics Data of NSN 5962-01-233-3489, 5962012333489

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 560 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 460 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 045 INCHES NOMINAL
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING495 0 MILLIWATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND LOW POWER
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONLEADLESS FLAT PACK
MEMORY	CQWX	OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN25 INPUT
MEMORY	CRHL	BIT QUANTITY65536
MEMORY	CSWJ	WORD QUANTITY8192
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC150 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 150 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPERAM
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY32 LEADLESS

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OW62256CD3-10	OW62256CD3-45	OW6264CD3-15	OW62256CD3-12
OW62256CD3-45	OW630200-000	OW62256CC3-70	OW62256CD3-45

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