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MRC | Criteria | Characteristic |
---|---|---|
AXGY | MOUNTING METHOD | UNTHREADED HOLE |
AKPV | MOUNTING FACILITY QUANTITY | 1 |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 400.0 MINIMUM WORKING PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALLOY |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | HYPERFAST DIODE |
FEAT | SPECIAL FEATURES | THIS DIODE IS OF SILICON NITRIDE PASSIVATED ION-IMPLANTED EPITAXIAL PLANAR CONSTRUCTION AND TAKES 8 AMPS. |
RHR01-22-1 | RHR-10B-VM | RHRG1560CC | RHR60PN120 OL ACP |
RHR-15PN60(220 | RHR-10VM | RHR30PN60 | RHR20PN30 |
RHR-10 | RHR55C2001FS | RHR01-22-1 | RHRB-50-ND |
RHR-10B | RHR1K160D | RHR55C2001FS | RHR-5P-10C |
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