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MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL ALL SEMICONDUCTOR DEVICE DIODE |
ABHP | OVERALL LENGTH | 0.240 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.260 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
ADAV | OVERALL DIAMETER | 0.335 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.370 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
ASCQ | INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
ASKA | COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
AXGY | MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 NOMINAL BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL SEMICONDUCTOR DEVICE DIODE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 70.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
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