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MRC | Criteria | Characteristic |
---|---|---|
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING660 0 MILLIWATTS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDBURN IN AND PROGRAMMED |
MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
MEMORY | CRHL | BIT QUANTITY65536 |
MEMORY | CZER | MEMORY DEVICE TYPEPROM |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS NOMINAL POWER SOURCE |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
HE1-50-2 | HE1-111326 | HE1 1 2X8 | HE1-3115 |
HE1-113305 | HE1-113305 | HE1-4A | HE1-50-2 |
HE1-103D | HE1-104E | HE1-104E | HE1-1135085E4 |
HE1-3115A | HE1-1 2 X 8 | HE1-3115 | HE1-113314 |
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