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MRC | Criteria | Characteristic |
---|---|---|
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CBBL | FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED AND ULTRAVIOLET ERASABLE |
CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
CZER | MEMORY DEVICE TYPE | ROM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
ADAQ | BODY LENGTH | 1.280 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510 |
AEHX | MAXIMUM POWER DISSIPATION RATING | 660.0 MILLIWATTS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CRHL | (NON-CORE DATA) BIT QUANTITY | 65536 |
CSWJ | (NON-CORE DATA) WORD QUANTITY | 8192 |
CY70678509 | CY70832V | CY70678506 | CY70678508 |
CY70678506 | CY70678509 | CY70678509 | CY70678506 |
CY70678506 | CY70678506 | CY70 | CY704U |
CY70678508 | CY70678507 | CY70678507 | CY70832V-133AI |
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