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| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
| MEMORY | CSWJ | WORD QUANTITY8192 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
| MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 150 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CRHL | BIT QUANTITY65536 |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | ADAT | BODY WIDTH0 610 INCHES MAXIMUM |
| MEMORY | CBBL | FEATURES PROVIDEDMONOLITHIC AND PROGRAMMABLE AND ERASABLE |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| WS5004-5 | WS50-25-C | WS5006 4002 | WS50-75-C |
| WS506 | WS506 | WS506 | WS50-75 |
| WS506 | WS50-50-C | WS50-50 | WS5-10L |
| WS50-25 | WS506 | WS5006-4001 | WS506 |
 |
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