229-055545-01 Microcircuit Memory by Bae Systems Operations Limited Dba Bae Systems Plc with NSN 5962-01-360-3295 - Buy Now!

Mfg Part Number: 229-055545-01

Alternate P/N:22905554501

Manufacturer: Bae Systems Operations Limited Dba Bae Systems Plc

NSN :5962-01-360-3295

Item Name : microcircuit memory

FSC :5962 Microcircuits Electronic

Thank you for your interest in 229-055545-01 under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number 229-055545-01, and it is manufactured by Bae Systems Operations Limited Dba Bae Systems Plc. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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NSN Information for Part Number 229-055545-01 with NSN 5962-01-360-3295, 5962013603295

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-360-3295 Item Description: Microcircuit Memory	5962	013603295	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
229-055545-01	5	2	5

Characteristics Data of NSN 5962-01-360-3295, 5962013603295

MRC	Criteria	Characteristic
MEMORY	ADAU	BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM
MEMORY	CQWX	OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510
MEMORY	CTQX	CURRENT RATING PER CHARACTERISTIC15 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC20 00 NANOSECONDS MAXIMUM PROPAGATION DELAY
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDPROGRAMMABLE AND ULTRAVIOLET ERASABLE AND BIDIRECTIONAL AND MONOLITHIC AND WENABLE AND WDISABLE AND WCLOCK AND WRESET AND ASYNCHRONOUS
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CRTL	CRITICALITY CODE JUSTIFICATIONFEAT
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 2 WATTS
MEMORY	AGAV	END ITEM IDENTIFICATIONMULTIPLE LAUNCH ROCKET SYSTEM MLRS AIRCRAFTAC-130H MC-130HEC-130EHC-130 HELICOPTER UH-60AUH-60D AIRCRAFT STARLIFTER C-141 AIRCRAFT AWACSE-3A
MEMORY	CZER	MEMORY DEVICE TYPEPAL
MEMORY	ADAQ	BODY LENGTH1 280 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORY	CQZP	INPUT CIRCUIT PATTERN22 INPUT
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CXCY	PART NAME ASSIGNED BY CONTROLLING AGENCYAND-OR-LOGIC ARRAY
MEMORY	CZEP	CAPITANCE RATING PER CHARACTERISTIC6 00 INPUT PICOFARADS MAXIMUM AND 12 00 OUTPUT PICOFARADS MAXIMUM
MEMORY	FEAT	SPECIAL FEATURESWEAPON SYSTEM ESSENTIAL
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT

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229-00026-10000	229-00035-10000	229-000	229-0000

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