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9481-00085 Microcircuit Memory by Bae Systems Operations Limited Dba Bae Systems Plc with NSN 5962-01-270-3486 - Buy Now!

Mfg Part Number: 9481-00085

Alternate P/N:948100085
Thank you for your interest in 9481-00085 under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number 9481-00085, and it is manufactured by Bae Systems Operations Limited Dba Bae Systems Plc. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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ASAP Global Supplies is a website owned and operated by ASAP Semiconductor, and we are a leading independent supplier of 9481-00085 Microcircuit Memory NSN part that serve a variety of applications. We invite you to explore our NSN part catalogues at your leisure to find a plethora of top requested items, such as 5962012703486. We uphold a strict no China sourcing policy, choosing instead to stock our inventory from top global manufacturers such as Bae Systems Operations Limited Dba Bae Systems Plc. Due to our commitment to quality standards and guidelines, we operate as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today on the purchasing process and see how ASAP Global Supplies can fulfill all of your operational needs with ease.

NSN Information for Part Number 9481-00085 with NSN 5962-01-270-3486, 5962012703486

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-270-3486

Item Description:

Microcircuit Memory

59620127034860NB
CIICHCCESDPMICCriticalityENAC
7BA0
Part NumberISCRNVCRNCCHCCMSDSSADC
9481-00085C25

Characteristics Data of NSN 5962-01-270-3486, 5962012703486

MRCCriteriaCharacteristic
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING550 0 MILLIWATTS
MEMORYAFGAOPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORYCBBLFEATURES PROVIDEDSTATIC OPERATION AND HIGH SPEED AND ASYNCHRONOUS
MEMORYCQSJINCLOSURE MATERIALCERAMIC
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORYCQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN14 INPUT
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5 0 VOLTS NOMINAL POWER SOURCE
MEMORYCZEQTIME RATING PER CHACTERISTIC150 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT
MEMORYCZERMEMORY DEVICE TYPEROM
MEMORYTESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORYTTQYTERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT

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